InGaAs PIN Photodiodes - IG22 Series

The semiconductor material absorbs incident IR photons in the intrinsic region generating electron hole pairs which are collected at external electrodes. Photovoltaic detectors are an excellent choice in many applications due to their high sensitivity, fast response, low noise and wide dynamic range.

InGaAs PIN photodiodes have a smaller energy gap than Si photodiodes meaning that they are sensitive at longer wavelengths than Si devices. The energy gap can also be adjusted by varying the composition ratio of In and Ga extending performance further into the infrared. A typical standard product is the IG22 with a peak wavelength of 2.2 microns, making it ideal for applications that cannot be met spectrally with a regular InGaAs photodiode; the detectors have active areas ranging in diameter from 0.25 to 3.00mm. Responsivity can be improved dramatically by reducing the operating temperature of the device with a thermo electric cooler.

The devices are manufactured in standard TO style packages and have long expected lifetimes making them ideal for fi t and forget applications such as gas analysis, laser monitoring, moisture measurement and tuneable diode laser spectroscopy.